Origin‘s Semiconductor Devices USR30P6 (600V/30A) Ultra Fast and Soft Recovery Diode USR30P6 Features ● Outline Drawing Unit : mm ・ High speed recovery time (less than 100ns). φ3.2±0.2 ・ Ultra soft recovery. 4.5 5±0.3 16 MAX ④ ・ Low forward voltage drop. ● Applications 4.0 ・ High frequency switched mode power supplies. 1.5 15±0.2 ● ・ Block diode (reverse current) as flywheel. 2.8 20±0.5 ・ Power factor and harmonic correction (snubber circuit) ● Structures 1 0.6 25.45±0.5 ・ Resin molded and Silicon epitaxial planar diode. ① ② ③ ・ TO-3P Package ④ ・ Weight : 5.2g ・ Terminal plating : Sn ・ Conforms to RoHS regulations ① ● ② ③ Absolute Maximum Ratings (Ta=25℃) Symbol Conditions Ratings Unit Repetitive Peak Reverse Voltage Items VRM − 600 V Average Rectified Forward Current IO Tc=90℃, Half sin wave, Resistive Load 30 A Peak Forward Surge Current IFSM Tj=25℃, 50Hz,Single-phase, Half sin wave, Non-Repetitive 300 A Tj − -40∼+150 ℃ Storage Temperature Tstg − -40∼+150 ℃ Mounting Torque TOR − 0.8 N・m Operating Junction Temperature ● Electrical Characteristics (Tj=25℃) Items Symbol Conditions TYP. MAX. Unit Forward Voltage Drop VF IF=30A − 1.5 V Reverse Current IR VR=600V − 200 μA Reverse Recovery Time trr IF=30A, dif/dt=-300/μs − 100 Ns SF IF=30A, dif/dt=-300/μs 0.8 − - Junction to Case − 1.0 ℃/W Softness Factor (※) Terminal resistance Rth(j-c) (※)Definition of Softness Factor trr IF ta dif/dt tb ソフトネスファクタ= ta Softness Factor tb IRRM 0.5 I RRM dir/dt 0.75 IRRM 1 dir/dt≒ IRPM tb dif/dt×ta dif/dt = = tb SF OSES2137_PD-06/2010 Origin‘s Semiconductor Devices USR30P6 (600V/30A) ● Characteristics Diagrams 最大値(Maximum) 代表値(Typical) 103 100 逆電流 Reverse Current IR[μA] 順電流 Forward Current IF[A] 102 Tj=150℃ 10 Tj=25℃ Tj=150℃ 101 100 Tj=75℃ 10-1 Tj=25℃ 10-2 パルス測定 Pulse measurement パルス測定 Pulse measurement -3 1 10 0 0.5 1 1.5 2 0 2.5 順電圧 Forward Voltage VF[V] 200 400 600 800 逆電圧 Reverse Voltage VR[V] FORWARD CHARACTERISTICS REVERSE CHARACTERISTICS 平均整流電流 Average Rectified Forward Current IO[A] 40 30 20 10 0 0 50 100 150 200 ケース温度 Case Temperature TC[℃] DERATING CURVE 2 OSES2137_PD-06/2010
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