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Origin‘s Semiconductor Devices
USR30P6 (600V/30A)
Ultra Fast and Soft Recovery Diode
USR30P6
Features
●
Outline Drawing
Unit : mm
・ High speed recovery time (less than 100ns).
φ3.2±0.2
・ Ultra soft recovery.
4.5
5±0.3
16 MAX
④
・ Low forward voltage drop.
●
Applications
4.0
・ High frequency switched mode power supplies.
1.5
15±0.2
●
・ Block diode (reverse current) as flywheel.
2.8
20±0.5
・ Power factor and harmonic correction
(snubber circuit)
●
Structures
1
0.6
25.45±0.5
・ Resin molded and Silicon epitaxial planar diode.
①
②
③
・ TO-3P Package
④
・ Weight : 5.2g
・ Terminal plating : Sn
・ Conforms to RoHS regulations
①
●
②
③
Absolute Maximum Ratings (Ta=25℃)
Symbol
Conditions
Ratings
Unit
Repetitive Peak Reverse Voltage
Items
VRM
−
600
V
Average Rectified Forward Current
IO
Tc=90℃, Half sin wave, Resistive Load
30
A
Peak Forward Surge Current
IFSM
Tj=25℃, 50Hz,Single-phase, Half sin wave, Non-Repetitive
300
A
Tj
−
-40∼+150
℃
Storage Temperature
Tstg
−
-40∼+150
℃
Mounting Torque
TOR
−
0.8
N・m
Operating Junction Temperature
●
Electrical Characteristics (Tj=25℃)
Items
Symbol
Conditions
TYP.
MAX.
Unit
Forward Voltage Drop
VF
IF=30A
−
1.5
V
Reverse Current
IR
VR=600V
−
200
μA
Reverse Recovery Time
trr
IF=30A, dif/dt=-300/μs
−
100
Ns
SF
IF=30A, dif/dt=-300/μs
0.8
−
-
Junction to Case
−
1.0
℃/W
Softness Factor (※)
Terminal resistance
Rth(j-c)
(※)Definition of Softness Factor
trr
IF
ta
dif/dt
tb
ソフトネスファクタ=
ta
Softness Factor
tb
IRRM
0.5 I RRM
dir/dt
0.75 IRRM
1
dir/dt≒
IRPM
tb
dif/dt×ta dif/dt
=
=
tb
SF
OSES2137_PD-06/2010
Origin‘s Semiconductor Devices
USR30P6 (600V/30A)
● Characteristics Diagrams
最大値(Maximum)
代表値(Typical)
103
100
逆電流 Reverse Current IR[μA]
順電流 Forward Current IF[A]
102
Tj=150℃
10
Tj=25℃
Tj=150℃
101
100
Tj=75℃
10-1
Tj=25℃
10-2
パルス測定
Pulse measurement
パルス測定
Pulse measurement
-3
1
10
0
0.5
1
1.5
2
0
2.5
順電圧 Forward Voltage VF[V]
200
400
600
800
逆電圧 Reverse Voltage VR[V]
FORWARD CHARACTERISTICS
REVERSE CHARACTERISTICS
平均整流電流 Average Rectified Forward Current IO[A]
40
30
20
10
0
0
50
100
150
200
ケース温度 Case Temperature TC[℃]
DERATING CURVE
2
OSES2137_PD-06/2010